Download e-book for kindle: 2007 2nd International Workshop on Advances in Sensors and by Institute of Electrical and Electronics Engineers

By Institute of Electrical and Electronics Engineers

ISBN-10: 1424412447

ISBN-13: 9781424412440

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All the four figures are exactly on the same scale for the purpose of comparison. 8 shows the scaling behavior of charge transport in organic transistors, including field-dependent mobility, injection-limited transport, and temperature dependence. To study the scaling behavior, the apparent contribution of the device geometry was filtered out by taking the current density vs. longitudinal field and plotting that relation for various channel lengths at four different temperatures, under a certain high gate bias beyond the threshold voltage of the transistors (−40 V).

The grown film has to be uniform and flat and have an ordered molecular stacking. For this purpose, after UV ozone or gentle oxygen plasma cleaning, a surface treatment is desired to form a well-ordered self-assembled monolayer of alkyl groups, before depositing an organic semiconductor layer. Two commonly used materials for a self-assembled monolayer (SAM) on top of SiO2 are HMDS (hexamethyldisilazane) and OTS [trichloro (octadecyl)silane], because these molecules have two functional groups: silane group on one end to bond with SiO2 and alkyl group on the other end to provide a hydrophobic layer for the molecules of organic semiconductor to grow.

Therefore for the 11 12 Chapter One OTFTs with channel lengths of 1 μm and longer, which are much larger than the average grain size (100 to 150 nm) of pentacene deposited under the conditions described above, the electrical transport data could be explained by the multiple trapping and release model28 with significant influence from the grain boundaries. However, when the channel length scales down to 500 nm and smaller, which is comparable to the grain sizes of the organic semiconductor layer, the average number of grains spanning the source-drain gap is reduced, as shown in Fig.

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2007 2nd International Workshop on Advances in Sensors and Interface by Institute of Electrical and Electronics Engineers

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